Piazza, Gianluca
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Publication Body-Biased Complementary Logic Implemented Using AIN Piezoelectric MEMS Switches(2009-01-01) Sinha, Nipun; Jones, Timothy S.; Guo, Zhijun; Piazza, GianlucaThis paper reports on the first implementation of low voltage complementary logic (< 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an ntype and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a ± 1.5 V voltage swing.Publication Use of a Single Multiplexed CMOS Oscillator as Direct Frequency Read-Out for an Array of Eight AlN Contour-Mode NEMS Resonant Sensors(2010-11-01) Rinaldi, Matteo; Zuniga, Chiara; Duick, Brandon; Piazza, GianlucaThis paper reports on the first demonstration of a single multiplexed CMOS oscillator circuit employed as direct frequency readout for an array of 8 nanoscaled aluminum nitride Contour-Mode Resonant Sensors (CMR-S). In this first prototype 8 thin-film (250 nm) AlN CMR-S operating at 186 MHz were fabricated on the same chip and simultaneously wire-bonded to a Pierce-like oscillator circuit (fabricated in the ON Semiconductor 0.5 µm CMOS process) by means of 8 CMOS transmission gates addressed via a 3 bit on-chip decoder. The 8 CMR-S were simultaneously exposed to different concentrations of methanol (0.1–1% of the saturated vapor pressure) and their response was monitored in a time-multiplexed mode. Frequency shifts of 300 Hz corresponding to changes of mass per unit area of 7 ag/µm2 were experimentally detected. Values of phase noise derived Allan deviation as low as 0.9 Hz were measured. Such Allan deviation translates in an estimated limit of detection of 21 zg/µm2.Publication Super-High-Frequency Two-Port AlN Contour-Mode Resonators for RF Applications(2010-01-01) Rinaldi, Matteo; Zuniga, Chiara; Zuo, Chengjie; Piazza, GianlucaThis paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.Publication Demonstration of Inverse Acoustic Band Gap Structures in AlN and Integration with Piezoelectric Contour Mode Transducers(2009-06-01) Kuo, Nai-Kuei; Zuo, Chengjie; Piazza, GianlucaThis paper presents the first design and demonstration of a novel inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) and its direct integration with piezoelectric contour-mode transducers. The experimental results indicate that the IABG structure has a stop band from 185 MHz to 240 MHz and is centered around 219 MHz with maximum rejection of 30 dB. The ABG-induced phonon scattering causes a frequency band gap that prohibits the propagation of certain acoustic wavelengths. In this work, the IABG unit cell consists of a high acoustic velocity (V) center material, which is formed by 2-μm-thick AlN sandwiched by 200-nm-thick platinum (Pt) and is held by four thin tethers and surrounded by a low acoustic velocity material (air). This cell arrangement enlarges the frequency band gap and eases the requirements on the thickness (d) to lattice constant (a) ratio, which was imposed by previous ABG demonstration in the very high frequency range. The finite element method (FEM) analysis indicates that the IABG can produce a gap-to-midgap ratio of 13.5% even when the d/a ratio is as small as 0.23. This advantage further allows the direct integration of the IABG with high frequency bulk acoustic wave (BAW) transducers.Publication Dual-Beam Actuation of Piezoelectric AlN RF MEMS Switches Monolithically Integrated with AlN Contour-Mode Resonators(2008-09-01) Mahameed, Rashed; Sinha, Nipun; Pisani, Marcelo B; Piazza, GianlucaThis work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5 to 20 V), facilitates active pull-off to open the switch and exhibits fast switching times (1 to 2 μs). This work also presents the combined response (cascaded S parameters) of a resonator and a switch that were co-fabricated on the same substrate. The response shows that the resonator can be effectively turned on and off by the switch. A post-CMOS compatible process was used for the co-fabrication of both the switches and the resonators. The single-chip RF solution presented herein constitutes an unprecedented step forward towards the realization of compact, low loss and integrated multi-frequency RF front-ends.Publication 5-10 GHz AlN Contour-Mode Nanoelectromechanical Resonators(2009-01-01) Rinaldi, Matteo; Zuniga, Chiara; Piazza, GianlucaThis paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical and lateral features in the range of 250 nm.Publication Single-Chip Multiple-Frequency ALN MEMS Filters Based on Contour-Mode Piezoelectric Resonators(2007-04-01) Piazza, Gianluca; Stephanou, Philip J; Pisano, Albert PThis paper reports experimental results on a new class of single-chip multiple-frequency (up to 236 MHz) filters that are based on low motional resistance contour-mode aluminum nitride piezoelectric micromechanical resonators. Rectangular plates and rings are made out of an aluminum nitride layer sandwiched between a bottom platinum electrode and a top aluminum electrode. For the first time, these devices have been electrically cascaded to yield high performance, low insertion loss (as low as 4 dB at 93MHz), and large rejection (27 dB at 236 MHz) micromechanical bandpass filters. This novel technology could revolutionize wireless communication systems by allowing cofabrication of multiple frequency filters on the same chip, potentially reducing form factors and manufacturing costs. In addition, these filters require terminations (1 kOmega termination is used at 236 MHz) that can be realized with on-chip inductors and capacitors, enabling their direct interface with standard 50-Omega systems.Publication Multi-Frequency Pierce Oscillators Based On Piezoelectric AlN Contour-Mode MEMS Resonators(2008-09-01) Zuo, Chengjie; Sinha, Nipun; Van der Spiegel, Jan; Piazza, GianlucaThis paper reports on the first demonstration of multi-frequency (176, 222, 307, and 482 MHz) oscillators based on piezoelectric AlN contour-mode MEMS resonators. All the oscillators show phase noise values between –88 and –68 dBc/Hz at 1 kHz offset and phase noise floors as low as –160 dBc/Hz at 1 MHz offset. The same Pierce circuit design is employed to sustain oscillations at the 4 different frequencies, while the oscillator core consumes at most 10 mW. The AlN resonators are currently wirebonded to the integrated circuit realized in the AMIS 0.5 μm 5 V CMOS process. This work constitutes a substantial step forward towards the demonstration of a single-chip multi-frequency reconfigurable timing solution that could be used in wireless communications and sensing applications.Publication Ultra-Thin-Film AlN Contour-Mode Resonators for Sensing Applications(2010-04-01) Rinaldi, Matteo; Zuniga, Chiara; Piazza, GianlucaThis paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass sensitivity.Publication Demonstration of Low Voltage and Functionally Complete Logic Operations Using Body-Biased Complementary and Ultra-Thin ALN Piezoelectric Mechanical Switches(2010-01-01) Sinha, Nipun; Jones, Timothy; Guo, Zhijun; Piazza, GianlucaThis paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias voltage < 8 V.