5-10 GHz AlN Contour-Mode Nanoelectromechanical Resonators

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Departmental Papers (ESE)
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Acoustics, Dynamics, and Controls
Electrical and Electronics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Nanoscience and Nanotechnology
Nanotechnology Fabrication
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This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical and lateral features in the range of 250 nm.

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Copyright 2009 IEEE. Reprinted from: Rinaldi, M.; Zuniga, C.; Piazza, G.; "5-10 GHz AlN Contour-Mode Nanoelectromechanical Resonators"; IEEE 22nd International Conference on Micro Electro Mechanical Systems, 2009. (MEMS 2009). 25-29 Jan. 2009 Page(s): 916 - 919 Digital Object Identifier 10.1109/MEMSYS.2009.4805533 This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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