5-10 GHz AlN Contour-Mode Nanoelectromechanical Resonators
Penn collection
Degree type
Discipline
Subject
Electrical and Electronics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Nanoscience and Nanotechnology
Nanotechnology Fabrication
Funder
Grant number
License
Copyright date
Distributor
Related resources
Contributor
Abstract
This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical and lateral features in the range of 250 nm.