Super-High-Frequency Two-Port AlN Contour-Mode Resonators for RF Applications

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Departmental Papers (ESE)
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Super High Frequency
Ultra-Thin-Film AlN
Nanoscaled Contour-Mode Resonators
MEMS Resonators
MEMS Filters
Acoustics, Dynamics, and Controls
Electrical and Computer Engineering
Electrical and Electronics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Nanoscience and Nanotechnology
Nanotechnology Fabrication
Signal Processing
Systems and Communications
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This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.

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Copyright 2010 IEEE. Reprinted from: Rinaldi, M.; Zuniga, C.; Zuo, C.; Piazza, G., "Super-high-frequency two-port AlN contour-mode resonators for RF applications," Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on , vol.57, no.1, pp.38-45, Jan. 2010 Publisher URL: Digital Object Identifier: 10.1109/TUFFC.2010.1376 This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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