Characterization of Silicon Deep Reactive Ion Etching Using the SPTS Rapier
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Protocols and Reports
Quattrone Nanofabrication Facility
Quattrone Nanofabrication Facility
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Nanoscience and Nanotechnology
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Abstract
This technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and highlights the difference in etch properties between small (~10 micron) and large (~500 micron) features.
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2016-10-06