LOPEZ, GERALD G

Email Address
ORCID
Disciplines
Research Projects
Organizational Units
Position
Introduction
Research Interests

Filters

2016 - 201823
23
212
Reset filters

Settings

Search Results

Now showing 1 - 10 of 23
  • Publication
    ZEP520A Contrast Curves
    (2016-12-16) Lopez, Gerald G.; Azadi, Mohsen
    This report documents the contrast curves for the ZEP520A electron beam lithography resist from ZEON Chemicals. Dilution by weight of ZEP520A vs spin speed from 1000 to 6000 rpm was generated in previous work. The aim is to provide an approximate clearing and base dose for the ZEP520A standard process at the Singh Center for Nanotechnology.
  • Publication
    Reactive Ion Etch (RIE) of Silicon and ZEP520A Resist Mask with Tetrafluoromethane (CF4) Using Oxford 80 Plus
    (2016-05-12) Wood, Steven; Lopez, Gerald G; Metzler, Meredith
    This report discusses the results of etching silicon with electron beam lithography defined features in ZEP520A resist using CF4 in the Oxford 80 Plus RIE.
  • Publication
    DisCharge: Spin-On Anti-Charging Agent for Electron Beam Lithography
    (2018-03-29) Lopez, Gerald G; de Villafranca, Glen
    This report documents the chemical DisCharge from DisChem, Inc. used as an anti-charging agent for electron beam lithography at the University of Pennsylvania Singh Center for Nanotechnology Quattrone Nanofabrication Facility. Charge accumulation while exposing atop an electrically insulating substrate can severely impact positional accuracy of the beam yielding poor litho. Using DisCharge has been shown to reduce charge accumulation for insulating substrates such as fused silica pieces, glass slides, and PDMS for positive resists such as PMMA, ZEP520A, CSAR 62 and mr-PosEBR.
  • Publication
    PMMA A2 Contrast Curves
    (2016-12-16) Lopez, Gerald G.; Azadi, Mohsen
    This report documents the contrast curves for the PMMA A2 electron beam lithography resist from MicroChem. Spin curves for PMMA A2 can be found in previous work. The aim is to provide an approximate clearing and base dose for the PMMA A2 standard process at the Singh Center for Nanotechnology.
  • Publication
    MicroChem S1800 Series Resist Application onto Si
    (2016-02-18) Wood, Steven; LOPEZ, GERALD G
    The Quattrone Nanofabrication Facility standard operating procedure for the application of MicroChem S1800 series resist onto an Si wafer is provided in this document.
  • Publication
    SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs. Dose-to-Clear and Contrast Curve Data
    (2016-04-27) Wood, Steven; Lopez, Gerald G
    The SOP for MicroChem SPR-220 7.0 at the Quattrone Nanofabrcation Facility is provided along with thickness vs. dose-to-clear and contrast curve data. The document is intended to provide a starting point when using MicroChem SPR-220 7.0.
  • Publication
    CSAR 62 Spin Curve
    (2018-12-21) Azadi, Mohsen; Griggs, Georgia; de Villafranca, Glen; Lopez, Gerald
  • Publication
    CSAR 62 Contrast Curves
    (2017-12-21) Azadi, Mohsen; Griggs, Georgia; de Villafranca, Glen; Lopez, Gerald
  • Publication
    High Contrast 50kV E-Beam Lithography for HSQ atop Diamond using ESPACER for Spin-On Charge Dissipation
    (2016-03-11) Grote, Richard R.; Bassett, Lee C.; Lopez, Gerald G.
    A high contrast HSQ process atop diamond is presented. A water soluable spin-on conductive layer called ESPACER is used as a charge dissipation layer in lieu of a metal thin film.
  • Publication
    Heidelberg DWL66+ S1813 Contrast Curves
    (2016-02-04) Wood, Steven; LOPEZ, GERALD G
    Accurately gauge the optimal machine setting for MicroChem S1813 using the Heidelberg DWL 66+ and plot the contrast curves for the 2mm and 10mm writeheads.