LOPEZ, GERALD G
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Publication Reactive Ion Etch (RIE) of Silicon and ZEP520A Resist Mask with Tetrafluoromethane (CF4) Using Oxford 80 Plus(2016-05-12) Wood, Steven; Lopez, Gerald G; Metzler, MeredithThis report discusses the results of etching silicon with electron beam lithography defined features in ZEP520A resist using CF4 in the Oxford 80 Plus RIE.Publication PMMA A2 and A4 Spin Curves(2016-12-16) Lopez, Gerald G; Azadi, MohsenThis report documents the spin curves for the PMMA A2 and A4 electron beam lithography resists from MicroChem. The aim is to provide a spin curve reference for the A2 and A4 dilutions at the Singh Center for Nanotechnolgy Quattrone Nanofabrication Facility.Publication Heidelberg DWL66+ S1805 Contrast Curves(2016-02-04) Wood, Steven; Lopez, Gerald GAccurately gauge the optimal machine setting for MicroChem S1805 using the Heidelberg DWL 66+ and obtain contrast curves based on the 2mm and 10mm writehead.Publication SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs. Dose-to-Clear and Contrast Curve Data(2016-04-27) Wood, Steven; Lopez, Gerald GThe SOP for MicroChem SPR-220 7.0 at the Quattrone Nanofabrcation Facility is provided along with thickness vs. dose-to-clear and contrast curve data. The document is intended to provide a starting point when using MicroChem SPR-220 7.0.Publication DisCharge: Spin-On Anti-Charging Agent for Electron Beam Lithography(2018-03-29) Lopez, Gerald G; de Villafranca, GlenThis report documents the chemical DisCharge from DisChem, Inc. used as an anti-charging agent for electron beam lithography at the University of Pennsylvania Singh Center for Nanotechnology Quattrone Nanofabrication Facility. Charge accumulation while exposing atop an electrically insulating substrate can severely impact positional accuracy of the beam yielding poor litho. Using DisCharge has been shown to reduce charge accumulation for insulating substrates such as fused silica pieces, glass slides, and PDMS for positive resists such as PMMA, ZEP520A, CSAR 62 and mr-PosEBR.Publication Characterization of Silicon Dioxide (SiO2) and Microchem S1800 Resist Etching Using Oxford 80 Plus RIE(2016-10-06) Azadi, Mohsen; Metzler, Meredith; Lopez, Gerald GThis technical report describes the process of etching silicon dioxide (SiO2) and Microchem S1800 resist using the Oxford 80 Plus Reactive Ion Etch (RIE) system.Publication Spin Curves for MicroChem S1800 (1805, 1813, 1818) Series Positive Resist(2016-07-18) Azadi, Mohsen; Lopez, Gerald GSpin curves for MicroChem's S1805, S1813, and S1818 were generated and mapped using the Filmetrics F50. Statistical measurements were performed (N=85) and are reported here.Publication ZEP520A Spin Curves and Dilution Characterization(2016-12-16) Lopez, Gerald GSpin curves for ZEP520A from ZEON Chemicals for the Singh Center for Nanotechnology were studied under non-diluted and diluted conditions by weight.Publication SUSS MicroTec MA6 Gen3 - S1813 Contrast Curve Data(2016-03-04) Bryan, Jonathan; Wood, Steven; Lopez, Gerald GPublication Characterization of Silicon Deep Reactive Ion Etching Using the SPTS Rapier(2016-10-06) Azadi, Mohsen; Metzler, Meredith; Lopez, Gerald GThis technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and highlights the difference in etch properties between small (~10 micron) and large (~500 micron) features.