DisCharge: Spin-On Anti-Charging Agent for Electron Beam Lithography
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Quattrone Nanofabrication Facility
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DisChem
EBL
electron beam lithography
e-beam
e-beam lithography
anti-charging
anti-charging agent
Electronic Devices and Semiconductor Manufacturing
Nanotechnology Fabrication
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Abstract
This report documents the chemical DisCharge from DisChem, Inc. used as an anti-charging agent for electron beam lithography at the University of Pennsylvania Singh Center for Nanotechnology Quattrone Nanofabrication Facility. Charge accumulation while exposing atop an electrically insulating substrate can severely impact positional accuracy of the beam yielding poor litho. Using DisCharge has been shown to reduce charge accumulation for insulating substrates such as fused silica pieces, glass slides, and PDMS for positive resists such as PMMA, ZEP520A, CSAR 62 and mr-PosEBR.