1.05 GHz MEMS Oscillator Based On Lateral-Field-Excited Piezoelectric AlN Resonators

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Zuo, Chengjie
Van der Spiegel, Jan
Piazza, Gianluca

This paper reports on the first demonstration of a 1.05 GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric Aluminum Nitride (AlN) contour-mode resonators. The oscillator shows a phase noise level of –81 dBc/Hz at 1 kHz offset frequency and a phase noise floor of –146 dBc/Hz, which satisfies the GSM requirements of Ultra High Frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMIS 0.5 μm CMOS process, with the oscillator core consuming only 3.5 mW static power. A simple two-mask process was used to fabricate the LFE AlN resonators from 843 MHz to 1.64 GHz with high Q (up to 2,200) and kt2 (up to 1.2%). This process further relaxes manufacturing tolerances and improves yield. All these advantages make it suitable for post-CMOS integrated on-chip direct GHz frequency synthesis in reconfigurable multi-band wireless communications.

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<p> Suggested Citation: <br> Chengjie Zuo, Jan Van der Spiegel, and Gianluca Piazza. "1.05 GHz MEMS Oscillator Based On Lateral-Field-Excited Piezoelectric AlN Resonators" 2009 Joint Meeting of the European Frequency and Time Forum and the IEEE International Frequency Control Symposium (EFTF-IFCS 2009) (2009): 381-384. </p> <p> ©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. </p>
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