Departmental Papers (ESE)

Abstract

This paper reports on the first demonstration of the 1.5 GHz CMOS oscillator based on thickness-field-excited (TFE) piezoelectric AIN MEMS contour-mode resonators (CMRs). The measured phase noise is -85 dBc/Hz at 10 kHz offset frequency and -151 dBc/Hz at 1MHz. This is the highest frequency MEMS oscillator ever reported using a laterally vibrating mechanical resonator. The high frequency operation has been enabled by optimizing the geometrical design and micro-fabrication process of TFE AIN CMRs, so that a low effective motional resistance around 50 Ω is achieved together with a high unloaded quality factor (Qu) approaching 2500 and simultaneously high kt2, up to 1.96%. A tunable-supply oscillator design is proposed for fine frequency tuning (or trimming) over a narrow bandwidth. Teh circuit design enables a novel GHz voltage-controlled oscillator (VCO) without the use of any low-Q tunable component. The 1.5 GHz VCO exhibits a 1500 ppm tuning range by a DC voltage change of 2.5 V. This technique can be utilized for fine frequency trimming and temperature compensation applications.

Document Type

Conference Paper

Date of this Version

2010

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Date Posted: 09 November 2010

This document has been peer reviewed.