Wabiszewski, Graham E

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  • Publication
    Angle-Resolved Environmental X-Ray Photoelectron Spectroscopy: A New Laboratory Setup for Photoemission Studies at Pressures up to 0.4 Torr
    (2012-09-27) Wabiszewski, Graham E; Mangolini, F.; Adiga, Vivek P; Åhlund, J.; Egberts, P.; Streller, F.; Backlund, K.; Carpick, Robert W; Karlsson, P. G; Wannberg, B.
    The paper presents the development and demonstrates the capabilities of a new laboratory-based environmental X-ray photoelectron spectroscopy system incorporating an electrostatic lens and able to acquire spectra up to 0.4 Torr. The incorporation of a two-dimensional detector provides imaging capabilities and allows the acquisition of angle-resolved data in parallel mode over an angular range of 14° without tilting the sample. The sensitivity and energy resolution of the spectrometer have been investigated by analyzing a standard Ag foil both under high vacuum (10−8 Torr) conditions and at elevated pressures of N2 (0.4 Torr). The possibility of acquiring angle-resolved data at different pressures has been demonstrated by analyzing a silicon/silicon dioxide (Si/SiO2) sample. The collected angle-resolved spectra could be effectively used for the determination of the thickness of the native silicon oxide layer.
  • Publication
    Ultra Thin AlN Piezoelectric Nano-Actuators
    (2009-06-01) Sinha, Nipun; Wabiszewski, Graham E; Carpick, Robert W; Mahameed, Rashed; Piazza, Gianluca; Felmetsger, Valery V; Tanner, Shawn M
    This paper reports the first implementation of ultra thin (100 nm) Aluminum Nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nano-actuators. An average piezoelectric coefficient (d31~ 1.9 pC/N) that is comparable to its microscale counterpart has been demonstrated in nanoscale thin AlN films. Vertical deflections as large as 40 nm have been obtained in 18 μm long and 350 nm thick cantilever beams under bimorph actuation with 2 V. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. Leakage current lower than 2 nA/cm2 at 1 V has been recorded and an average relative dielectric constant of approximately 9.2 (as in thicker films) has been measured. These material characteristics and preliminary actuation results make the AlN nano-films ideal candidates for the realization of nanoelectromechanical switches for low power logic applications.
  • Publication
    Piezoelectric aluminum nitride nanoelectromechanical actuators
    (2009-08-03) Sinha, Nipun; Wabiszewski, Graham E; Carpick, Robert W; Mahameed, Rashed; piazza, Gianluca; Felmetsger, Valery V; Tanner, Shawn M
    This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nanoactuators. The films exhibit an average piezoelectric coefficient (d31~−1.9 pC/N), which is comparable to its microscale counterpart. This allows vertical deflections as large as 40 nm from 18 µm long and 350 nm thick multilayer cantilever bimorph beams with 2 V actuation. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. The films exhibit leakage currents lower than 2 nA/cm2 at 1 V, and have an average relative dielectric constant of approximately 9.2 (as in thicker films). These material characteristics and actuation results make the AlN nanofilms ideal candidates for the realization of nanoelectromechanical switches for low power logic applications.