Ultra Thin AlN Piezoelectric Nano-Actuators

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piezoelectric film
Aluminum Nitride
AlN thin film
Electrical and Electronics
Mechanical Engineering
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Mahameed, Rashed
Felmetsger, Valery V
Tanner, Shawn M

This paper reports the first implementation of ultra thin (100 nm) Aluminum Nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nano-actuators. An average piezoelectric coefficient (d31~ 1.9 pC/N) that is comparable to its microscale counterpart has been demonstrated in nanoscale thin AlN films. Vertical deflections as large as 40 nm have been obtained in 18 μm long and 350 nm thick cantilever beams under bimorph actuation with 2 V. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. Leakage current lower than 2 nA/cm2 at 1 V has been recorded and an average relative dielectric constant of approximately 9.2 (as in thicker films) has been measured. These material characteristics and preliminary actuation results make the AlN nano-films ideal candidates for the realization of nanoelectromechanical switches for low power logic applications.

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The 15th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2009)
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Suggested Citation: Sinha, N.; Wabiszewski, G.E.; Mahameed, R.; Felmetsger, V.V.; Tanner, S.M.; Carpick, R.W.; Piazza, G.; , "Ultra thin AlN piezoelectric nano-actuators," Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International. 21-25 June 2009. Denver, Colorado This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. doi: 10.1109/SENSOR.2009.5285460 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5285460&isnumber=5285368
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