Protocols and Reports
Document Type
Technical Report
Date of this Version
5-12-2021
Facility
Quattrone Nanofabrication Facility
Abstract
SPR 220-3 photoresist was spin-coated onto a silicon wafer, exposed using a Heidelberg DWL66+ laserwriter at different laser powers, and developed at different temperatures. The effect of developer temperature on photoresist contrast was examined. Results show that increasing developer temperature decreased photoresist contrast and increased required dose.
Keywords
Photoresist, SPR 220, contrast, developer, temperature, grayscale, lithography
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Date Posted: 12 May 2021
This document has been peer reviewed.