Protocols and Reports

Document Type

Technical Report

Date of this Version

5-12-2021

Facility

Quattrone Nanofabrication Facility

Abstract

SPR 220-3 photoresist was spin-coated onto a silicon wafer, exposed using a Heidelberg DWL66+ laserwriter at different laser powers, and developed at different temperatures. The effect of developer temperature on photoresist contrast was examined. Results show that increasing developer temperature decreased photoresist contrast and increased required dose.

Keywords

Photoresist, SPR 220, contrast, developer, temperature, grayscale, lithography

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Date Posted: 12 May 2021

This document has been peer reviewed.

 

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