Effect of Annealing on the Contact Resistance of Aluminum on a p-type Substrate
Loading...
Penn collection
Protocols and Reports
Quattrone Nanofabrication Facility
Quattrone Nanofabrication Facility
Degree type
Discipline
Subject
Metallization
contact resistance
aluminum contacts
contact resistivity
Biochemical and Biomolecular Engineering
Bioelectrical and Neuroengineering
Biological Engineering
Biomaterials
Biomechanical Engineering
Biomedical
Biomedical Devices and Instrumentation
Electrical and Computer Engineering
Electrical and Electronics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Engineering Mechanics
Materials Science and Engineering
Mechanics of Materials
Metallurgy
Nanotechnology Fabrication
Other Biomedical Engineering and Bioengineering
Other Electrical and Computer Engineering
Semiconductor and Optical Materials
Structural Materials
Systems and Communications
VLSI and Circuits, Embedded and Hardware Systems
contact resistance
aluminum contacts
contact resistivity
Biochemical and Biomolecular Engineering
Bioelectrical and Neuroengineering
Biological Engineering
Biomaterials
Biomechanical Engineering
Biomedical
Biomedical Devices and Instrumentation
Electrical and Computer Engineering
Electrical and Electronics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Engineering Mechanics
Materials Science and Engineering
Mechanics of Materials
Metallurgy
Nanotechnology Fabrication
Other Biomedical Engineering and Bioengineering
Other Electrical and Computer Engineering
Semiconductor and Optical Materials
Structural Materials
Systems and Communications
VLSI and Circuits, Embedded and Hardware Systems
Funder
Grant number
License
Copyright date
Distributor
Related resources
Contributor
Abstract
Aluminum contacts are widely used to form both ohmic and rectifying contacts. The process to form these contacts involves annealing, thus it is important to study the effect of annealing on the electrical properties of the contacts. Here, we present a way to measure the contact resistance of aluminum contacts formed on a p-type silicon substrate. It was found the contact resistivity decreased by an average of 18%. It was thus found that annealing at 400°C in a forming gas environment improves the electrical properties of aluminum contacts.
Advisor
Date Range for Data Collection (Start Date)
Date Range for Data Collection (End Date)
Digital Object Identifier
Series name and number
Publication date
2019-11-14