Effect of Annealing on the Contact Resistance of Aluminum on a p-type Substrate

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dc.contributor.authorShah, Shrey
dc.contributor.authorWatson, George Patrick
dc.coverage.locationQuattrone Nanofabrication Facility
dc.date2023-05-17T23:04:42.000
dc.date.accessioned2023-05-23T01:19:11Z
dc.date.available2023-05-23T01:19:11Z
dc.date.issued2019-11-14
dc.date.submitted2019-11-14T08:28:33-08:00
dc.description.abstractAluminum contacts are widely used to form both ohmic and rectifying contacts. The process to form these contacts involves annealing, thus it is important to study the effect of annealing on the electrical properties of the contacts. Here, we present a way to measure the contact resistance of aluminum contacts formed on a p-type silicon substrate. It was found the contact resistivity decreased by an average of 18%. It was thus found that annealing at 400°C in a forming gas environment improves the electrical properties of aluminum contacts.
dc.identifier.urihttps://repository.upenn.edu/handle/20.500.14332/45883
dc.legacy.articleid1063
dc.legacy.fulltexturlhttps://repository.upenn.edu/cgi/viewcontent.cgi?article=1063&context=scn_protocols&unstamped=1
dc.source.issue63
dc.source.journalProtocols and Reports
dc.source.peerreviewedtrue
dc.source.statuspublished
dc.subject.otherMetallization
dc.subject.othercontact resistance
dc.subject.otheraluminum contacts
dc.subject.othercontact resistivity
dc.subject.otherBiochemical and Biomolecular Engineering
dc.subject.otherBioelectrical and Neuroengineering
dc.subject.otherBiological Engineering
dc.subject.otherBiomaterials
dc.subject.otherBiomechanical Engineering
dc.subject.otherBiomedical
dc.subject.otherBiomedical Devices and Instrumentation
dc.subject.otherElectrical and Computer Engineering
dc.subject.otherElectrical and Electronics
dc.subject.otherElectro-Mechanical Systems
dc.subject.otherElectronic Devices and Semiconductor Manufacturing
dc.subject.otherEngineering Mechanics
dc.subject.otherMaterials Science and Engineering
dc.subject.otherMechanics of Materials
dc.subject.otherMetallurgy
dc.subject.otherNanotechnology Fabrication
dc.subject.otherOther Biomedical Engineering and Bioengineering
dc.subject.otherOther Electrical and Computer Engineering
dc.subject.otherSemiconductor and Optical Materials
dc.subject.otherStructural Materials
dc.subject.otherSystems and Communications
dc.subject.otherVLSI and Circuits, Embedded and Hardware Systems
dc.titleEffect of Annealing on the Contact Resistance of Aluminum on a p-type Substrate
dc.typeWorking Paper
digcom.contributor.authorisAuthorOfPublication|email:sshrey@seas.upenn.edu|institution:Singh Center for Nanotechnology|Shah, Shrey
digcom.contributor.authorisAuthorOfPublication|email:gewatson@seas.upenn.edu|institution:Singh Center for Nanotechnology|Watson, George Patrick
digcom.identifierscn_protocols/63
digcom.identifier.contextkey15775221
digcom.identifier.submissionpathscn_protocols/63
digcom.typeworkingpaper
dspace.entity.typePublication
relation.isAuthorOfPublication19fa16d7-3ef4-439a-b24c-1345644e60a7
relation.isAuthorOfPublicationd8364f8d-c285-4db7-8953-ac4f5e3fdbde
relation.isAuthorOfPublication.latestForDiscovery19fa16d7-3ef4-439a-b24c-1345644e60a7
upenn.schoolDepartmentCenterProtocols and Reports
upenn.schoolDepartmentCenterQuattrone Nanofabrication Facility
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