Date of this Version
Quattrone Nanofabrication Facility
Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between SiO2 and Si using two ﬂuorocarbon gases, CF4 and CHF3. Results show that CHF3 gives better selectivity (16:1) over CF4 (1.2 :1). On the other hand, the etch rate of SiO2 of CF4 is approximately 52.8 nm/min, faster than CHF3 (32.4 nm/min).
Reactive ion etching, RIE, Si, SiO2, CHF3, CF4, Selectivity
Biomedical Commons, Biomedical Devices and Instrumentation Commons, Ceramic Materials Commons, Electrical and Electronics Commons, Electromagnetics and Photonics Commons, Electro-Mechanical Systems Commons, Electronic Devices and Semiconductor Manufacturing Commons, Membrane Science Commons, Nanotechnology Fabrication Commons, Other Biomedical Engineering and Bioengineering Commons, Semiconductor and Optical Materials Commons, Structural Materials Commons, Systems and Integrative Engineering Commons, VLSI and Circuits, Embedded and Hardware Systems Commons
Date Posted: 01 March 2019
This document has been peer reviewed.