Protocols and Reports

Document Type

Technical Report

Date of this Version

3-1-2019

Facility

Quattrone Nanofabrication Facility

Abstract

Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between SiO2 and Si using two fluorocarbon gases, CF4 and CHF3. Results show that CHF3 gives better selectivity (16:1) over CF4 (1.2 :1). On the other hand, the etch rate of SiO2 of CF4 is approximately 52.8 nm/min, faster than CHF3 (32.4 nm/min).

Keywords

Reactive ion etching, RIE, Si, SiO2, CHF3, CF4, Selectivity

Share

COinS
 

Date Posted: 01 March 2019

This document has been peer reviewed.

 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.