Reactive Ion Etching Selectivity of Si/SiO2: Comparing of two fluorocarbon gases CHF3 and CF4
dc.contributor.author | Zhang, Meiyue | |
dc.contributor.author | Watson, Pat | |
dc.coverage.location | Quattrone Nanofabrication Facility | |
dc.date | 2023-05-17T21:47:42.000 | |
dc.date.accessioned | 2023-05-23T01:19:01Z | |
dc.date.available | 2023-05-23T01:19:01Z | |
dc.date.issued | 2019-03-01 | |
dc.date.submitted | 2019-03-01T08:32:31-08:00 | |
dc.description.abstract | Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between SiO2 and Si using two fluorocarbon gases, CF4 and CHF3. Results show that CHF3 gives better selectivity (16:1) over CF4 (1.2 :1). On the other hand, the etch rate of SiO2 of CF4 is approximately 52.8 nm/min, faster than CHF3 (32.4 nm/min). | |
dc.identifier.uri | https://repository.upenn.edu/handle/20.500.14332/45874 | |
dc.legacy.articleid | 1055 | |
dc.legacy.fulltexturl | https://repository.upenn.edu/cgi/viewcontent.cgi?article=1055&context=scn_protocols&unstamped=1 | |
dc.source.issue | 55 | |
dc.source.journal | Protocols and Reports | |
dc.source.peerreviewed | true | |
dc.source.status | published | |
dc.subject.other | Reactive ion etching | |
dc.subject.other | RIE | |
dc.subject.other | Si | |
dc.subject.other | SiO2 | |
dc.subject.other | CHF3 | |
dc.subject.other | CF4 | |
dc.subject.other | Selectivity | |
dc.subject.other | Biomedical | |
dc.subject.other | Biomedical Devices and Instrumentation | |
dc.subject.other | Ceramic Materials | |
dc.subject.other | Electrical and Electronics | |
dc.subject.other | Electromagnetics and Photonics | |
dc.subject.other | Electro-Mechanical Systems | |
dc.subject.other | Electronic Devices and Semiconductor Manufacturing | |
dc.subject.other | Membrane Science | |
dc.subject.other | Nanotechnology Fabrication | |
dc.subject.other | Other Biomedical Engineering and Bioengineering | |
dc.subject.other | Semiconductor and Optical Materials | |
dc.subject.other | Structural Materials | |
dc.subject.other | Systems and Integrative Engineering | |
dc.subject.other | VLSI and Circuits, Embedded and Hardware Systems | |
dc.title | Reactive Ion Etching Selectivity of Si/SiO2: Comparing of two fluorocarbon gases CHF3 and CF4 | |
dc.type | Report | |
digcom.identifier | scn_protocols/55 | |
digcom.identifier.contextkey | 13930557 | |
digcom.identifier.submissionpath | scn_protocols/55 | |
digcom.type | report | |
dspace.entity.type | Publication | |
relation.isAuthorOfPublication | bbd10dee-9243-4952-8fba-32c456f1e501 | |
relation.isAuthorOfPublication | d8364f8d-c285-4db7-8953-ac4f5e3fdbde | |
relation.isAuthorOfPublication.latestForDiscovery | bbd10dee-9243-4952-8fba-32c456f1e501 | |
upenn.schoolDepartmentCenter | Protocols and Reports | |
upenn.schoolDepartmentCenter | Quattrone Nanofabrication Facility |
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