Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

11-30-2006

Abstract

Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as 0.42 mA for a 28 nm nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.

Comments

Suggested Citation:
Lee, S., Ko, D., Jung, Y. and Agarwal, R. (2011). Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires. Applied Physics Letters. 89, 223116.

© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.2397558

Share

COinS
 

Date Posted: 07 July 2011

This document has been peer reviewed.