Jung, Yeonwoong

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2006 - 20102
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  • Publication
    Size-Dependent Phase Transition Memory Switching Behavior and Low Writing Currents in GeTe Nanowires
    (2006-11-30) Lee, Se-Ho; Jung, Yeonwoong; Ko, Dong-Kyun; Agarwal, Ritesh
    Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as 0.42 mA for a 28 nm nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.
  • Publication
    Extremely Low Drift of Resistance and Threshold Voltage in Amorphous Phase Change Nanowire Devices
    (2010-06-04) Jung, Yeonwoong; Gianola, Daniel S; Mitra, Mukut; Agarwal, Ritesh
    Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. However, drift in stressed nanowires embedded under dielectric films is comparable to thin-films. Our results shows that drift in PCM is due to stress relaxation and will help in understanding and controlling drift in PCM devices.