Agarwal, Ritesh

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Now showing 1 - 4 of 4
  • Publication
    Size-Dependent Phase Transition Memory Switching Behavior and Low Writing Currents in GeTe Nanowires
    (2006-11-30) Lee, Se-Ho; Jung, Yeonwoong; Ko, Dong-Kyun; Agarwal, Ritesh
    Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as 0.42 mA for a 28 nm nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.
  • Publication
    Rectifying junctions of tin oxide and poly(3-hexylthiophene) nanofibers fabricated via electrospinning
    (2009-02-23) Pinto, N J; Rodd, Christopher M; Carrasquillo, K V; Agarwal, Ritesh
    Abstract: A fast, simple, and inexpensive method to fabricate in air, p-n diodes using electrospun tin oxide nanoribbons and regioregular poly(3-hexylthiophene) nanofibers is described. In addition to being a rectifier under ambient illumination or in the dark, the advantage of our design is the complete exposure of the rectifying nanojunction to the surrounding environment, making them attractive candidates in the potential fabrication of low power consumption diodes and sensors. The diode characteristics were analyzed using the standard diode equation and its use as a UV light sensor was examined.
  • Publication
    Incorporating Polaritonic Effects in Semiconductor Nanowire Waveguide Dispersion
    (2010-08-01) Van Vugt, Lambert K; Piccione, Brian; Agarwal, Ritesh
    We present the calculated and measured energy-propagation constant (E-ß) dispersion of CdS nanowire waveguides at room temperature, where we include dispersive effects via the exciton-polariton model using physical parameters instead of a phenomenological equation. The experimental data match well with our model while the phenomenological equation fails to capture effects originating due to light-matter interaction in nanoscale cavities. Due to the excitonic-polaritonic effects, the group index of the guided light peaks close to the band edge, which can have important implications for optical switching and sensor applications.
  • Publication
    Extremely Low Drift of Resistance and Threshold Voltage in Amorphous Phase Change Nanowire Devices
    (2010-06-04) Jung, Yeonwoong; Gianola, Daniel S; Mitra, Mukut; Agarwal, Ritesh
    Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. However, drift in stressed nanowires embedded under dielectric films is comparable to thin-films. Our results shows that drift in PCM is due to stress relaxation and will help in understanding and controlling drift in PCM devices.