We have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 µm radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the l/f noise could be easily resolved and analyzed in detail. The effects of different device terminal DC biases and channel geometries on the noise are described.
Date of this Version
Date Posted: 12 October 2010
This document has been peer reviewed.