Williams, Hugh H

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  • Publication
    Noise Spectral Density Measurements of a Radiation Hardened CMOS Process in the Weak and Moderate Inversion
    (1992) Williams, Hugh H; Van der Spiegel, Jan; Newcomer, F Mitchell; Tedja, Suharli; Van Berg, Richard P
    We have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 µm radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the l/f noise could be easily resolved and analyzed in detail. The effects of different device terminal DC biases and channel geometries on the noise are described.