Departmental Papers (ESE)

Abstract

This paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 Ω, which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz – 1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip.

Document Type

Conference Paper

Date of this Version

1-1-2010

Publication Source

23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010)

Start Page

719

Last Page

722

Comments

Suggested Citation:
Chengjie Zuo, Nipun Sinha, and Gianluca Piazza. "Novel Electrode Configurations in Dual-Layer Stacked and Switchable AlN Contour-Mode Resonators for Low Impedance Filter Termination and Reduced Insertion Loss" 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010) (2010): 719-722.

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Date Posted: 13 July 2010