ScholarlyCommons

Title

Novel Electrode Configurations in Dual-Layer Stacked and Switchable AlN Contour-Mode Resonators for Low Impedance Filter Termination and Reduced Insertion Loss

Author(s)

Chengjie Zuo, University of PennsylvaniaFollow
Nipun Sinha, University of PennsylvaniaFollow
Gianluca Piazza, University of PennsylvaniaFollow

Abstract

This paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 Ω, which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz – 1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip.

Document Type

Conference Paper

Date of this Version

1-1-2010

Publication Source

23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010)

Start Page

719

Last Page

722

Comments

Suggested Citation:
Chengjie Zuo, Nipun Sinha, and Gianluca Piazza. "Novel Electrode Configurations in Dual-Layer Stacked and Switchable AlN Contour-Mode Resonators for Low Impedance Filter Termination and Reduced Insertion Loss" 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010) (2010): 719-722.

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