Reactive Ion Etching Selectivity of Si/SiO2: Comparing of two fluorocarbon gases CHF3 and CF4
Loading...
Degree type
Discipline
Subject
Reactive ion etching
RIE
Si
SiO2
CHF3
CF4
Selectivity
Biomedical
Biomedical Devices and Instrumentation
Ceramic Materials
Electrical and Electronics
Electromagnetics and Photonics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Membrane Science
Nanotechnology Fabrication
Other Biomedical Engineering and Bioengineering
Semiconductor and Optical Materials
Structural Materials
Systems and Integrative Engineering
VLSI and Circuits, Embedded and Hardware Systems
RIE
Si
SiO2
CHF3
CF4
Selectivity
Biomedical
Biomedical Devices and Instrumentation
Ceramic Materials
Electrical and Electronics
Electromagnetics and Photonics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Membrane Science
Nanotechnology Fabrication
Other Biomedical Engineering and Bioengineering
Semiconductor and Optical Materials
Structural Materials
Systems and Integrative Engineering
VLSI and Circuits, Embedded and Hardware Systems
Funder
Grant number
License
Copyright date
Distributor
Related resources
Author
Contributor
Abstract
Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between SiO2 and Si using two fluorocarbon gases, CF4 and CHF3. Results show that CHF3 gives better selectivity (16:1) over CF4 (1.2 :1). On the other hand, the etch rate of SiO2 of CF4 is approximately 52.8 nm/min, faster than CHF3 (32.4 nm/min).
Advisor
Date Range for Data Collection (Start Date)
Date Range for Data Collection (End Date)
Digital Object Identifier
Series name and number
Publication date
2019-03-01