Atomic Layer Deposition (ALD) film characterization
Loading...
Degree type
Discipline
Subject
Funder
Grant number
License
Copyright date
Distributor
Related resources
Contributor
Abstract
This report shows deposition characteristics for aluminum oxide (Al2O3), hafnium oxide (HfO2), and titanium dioxide (TiO2) films deposited in the Cambridge Nanotech Savannah system. A brief study of the presence of pinholes in these films is also presented.
Advisor
Date Range for Data Collection (Start Date)
Date Range for Data Collection (End Date)
Digital Object Identifier
Series name and number
Publication date
2016-04-28