KOH etching of (100) Si wafer, No 2
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Quattrone Nanofabrication Facility
Quattrone Nanofabrication Facility
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KOH etching Silicon
Biological and Chemical Physics
Engineering Physics
Inorganic Chemistry
Materials Chemistry
Membrane Science
Other Chemical Engineering
Other Materials Science and Engineering
Physical Chemistry
Structural Materials
Biological and Chemical Physics
Engineering Physics
Inorganic Chemistry
Materials Chemistry
Membrane Science
Other Chemical Engineering
Other Materials Science and Engineering
Physical Chemistry
Structural Materials
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Abstract
This report describes KOH etching of (100) Si wafer through a hard mask of silicon oxide, and reveals that the scattered etch rate is ascribed to the etch rates of the different crystal planes exposed during the etching.
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2016-09-02