Departmental Papers (ESE)


An image sensor comprising an array of 128 by 50 super pixels, column parallel current conveyors and global difference double sampling (DDS) unit is presented. The super pixel consists of: a reset transistor, a readout transistor, four transfer transistors and four photodiodes. The photo pixel address switch is placed outside the pixel, effectively implementing 1.5 transistors per pixel using a sharing scheme of the readout and reset transistor. The column FPN of 0.43% from saturated level and SNR of 43.9 dB is measured. The total power consumption is 5 mW at 30 frame/s.

Document Type

Journal Article

Date of this Version



Suggested Citation:
Gruev, V., Yang, Z. and Van der Spiegel, J. (2009). "Low-power reduced transistor image sensor." Electronic Letters Vol. 45(15).

©2009 The Institute of Engineering and Technology. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the The Institute of Engineering and Technology.



Date Posted: 22 December 2010

This document has been peer reviewed.