An Organic Thin Film Transistors (OTFT) using poly(3,4-ethylene dioxythiophene) polystyrene sulfonate (PEDOT:PSS) is fabricated using a Fuji film Dimatix Inkjet printer, and successfully shows the characteristics of field effect transistor as a result of optimization of the inkjet printing condition. The V-I characteristics of the two devices also satisfy the fundamental property of transistors that wider is the channel length, smaller is the drain current. Another significant property is observed that the higher gate voltage induces the higher drain current as it allows larger carrier concentration in the channel region.