Bargatin, Igor

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20122
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  • Publication
    Smart-Cut Layer Transfer of Single-Crystal SiC Using Spin-on-Glass
    (2012-07-03) Lee, Jae-Hyung; Bargatin, Igor; Park, Joonsuk; Milaninia, Kaveh M; Theogarajan, Luke S; Sinclair, Robert; Howe, Roger T
    The authors demonstrate “smart-cut”-type layer transfer of single-crystal silicon carbide (SiC) by using spin-on-glass (SoG) as an adhesion layer. Using SoG as an adhesion layer is desirable because it can planarize the surface, facilitate an initial low temperature bond, and withstand the thermal stresses at high temperature where layer splitting occurs (800–900 °C). With SoG, the bonding of wafers with a relatively large surface roughness of 7.5–12.5 Å rms can be achieved. This compares favorably to direct (fusion) wafer bonding, which usually requires extremely low roughness (<2 Å rms), typically achieved using chemical mechanical polishing (CMP) after implantation. The higher roughness tolerance of the SoG layer transfer removes the need for the CMP step, making the process more reliable and affordable for expensive materials like SiC. To demonstrate the reliability of the smart-cut layer transfer using SoG, we successfully fabricated a number of suspended MEMS structures using this technology.
  • Publication
    A Model for Emission Yield from Planar Photocathodes Based on Photon-Enhanced Thermionic Emission or Negative-Electron-Affinity Photoemission
    (2012-11-06) Sahasrabuddhe, Kunal; Schwede, Jared W; Bargatin, Igor; Jean, Joel; Howe, Roger T; Shen, Zhi-Xun; Melosh, Nicholas A
    A general model is presented for electron emission yield from planar photocathodes that accounts for arbitrary cathode thickness and finite recombination velocities at both front and back surfaces. This treatment is applicable to negative electron affinity emitters as well as positive electron affinity cathodes, which have been predicted to be useful for energy conversion. The emission model is based on a simple one-dimensional steady-state diffusion treatment. The resulting relation for electron yield is used to model emission from thin-film cathodes with material parameters similar to GaAs. Cathode thickness and recombination at the emissive surface are found to strongly affect emission yield from cathodes, yet the magnitude of the effect greatly depends upon the emission mechanism. A predictable optimal film thickness is found from a balance between optical absorption, surface recombination, and emission rate.