Mahameed, Rashed
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Publication Hybrid Ultra-Compact 4th Order Band-Pass Filters Based On Piezoelectric AlN Contour-Mode MEMS Resonators(2008-06-01) Zuo, Chengjie; Sinha, Nipun; Perez, Carlos R.; Mahameed, Rashed; Pisani, Marcelo B.; Piazza, GianlucaThis work reports on the design, fabrication and testing of a new class of hybrid (filter design using combined electrical and mechanical coupling techniques) ultra-compact (800×120 μm) 4th order band-pass filters based on piezoelectric Aluminum Nitride (AlN) contour-mode microelectromechanical (MEM) resonators. The demonstrated 110 MHz filter shows a low insertion loss of 5.2 dB in air, a high out-of-band rejection of 65 dB, a fractional bandwidth as high as 1.14% (hard to obtain when only conventional electrical coupling is used in the AlN contour-mode technology), and unprecedented 30 dB and 50 dB shape factors of 1.93 and 2.36, respectively. All these are achieved in an extremely small footprint and by using just half the space that any other 4th order filter would have taken. In terms of nonlinearities, the 110 MHz filter shows a 1 dB compression point higher than +63 dBmV and input third order intercept point (IIP3) values well beyond +153 dBmV. This new hybrid design represents a net improvement over the state of the art and constitutes a very promising solution for intermediate frequency (IF) filtering in many wireless communication systems.Publication Dual Beam Actuation of Piezoelectric AlN RF MEMS Switches Integrated with AlN Contour-mode Resonators(2008-06-02) Sinha, Nipun; Mahameed, Rashed; Zuo, Chengjie; Piazza, Gianluca; Pisani, Marcelo B.; Perez, Carlos R.This work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5-20 V), facilitates active pull-off to open the switch and fast switching times (1 to 2 µsec). This work also presents the combined response (cascaded S-parameters) of a resonator and a switch that were co-fabricated on the same substrate. The response shows that the resonator can be effectively turned on and off by the switch. A post-CMOS compatible process was used for fabrication of both the switches and the resonators. The single-chip RF solution presented herein constitutes an unprecedented step forward towards the realization of compact, low loss and integrated multi-frequency RF front-ends.