Joshi, Unnati

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Now showing 1 - 2 of 2
  • Publication
    Progress Report I: Fabrication of Nanopores in Silicon Nitride Membranes using Self-Assembly of PS-b-PMMA
    (2019-03-05) Joshi, Unnati; Venkatesh, Vishal; Yamamoto, Hiromichi
    This progress report describes fabrication of silicon nitride membranes from Si wafers using cleanroom techniques, and of nanopore preparation via a self-assembled PS-b-PMMA film. A 36.9 µm thick membrane is successfully prepared by KOH wet etching. The membrane is a layered structure of 36.8 µm thick Si and 116 nm thick silicon nitride. It is also exhibited that in the 47 nm thick PS-b-PMMA film, the nanopore structure is observed in the vicinity of a dust particle, but most of the area indicates lamellar domain structure. The thickness of PS-b-PMMA film will be optimized to prepare a complete nanopore template in the future work.
  • Publication
    Progress Report II: Fabrication of Nanopores in Silicon Nitride Membrane using Self-Assembly of PS-b-PMMA: Nanopore Pattern Transfer to the Si substrate
    (2019-10-08) Watanabe, Kodai; Joshi, Unnati; Yamamoto, Hiromichi
    The asymmetric PS(46k)-b-PMMA(21k) film was spin-coated on a neutral brush layer grafted onto a Spin-On-Glass (SOG) layer on the aluminum oxide layer on a Si substrate. An aluminum oxide layer was used as a hard mask. The PS-b-PMMA film was annealed at 190 degree C under vacuum for 3 days, so that the ~20 nm diameter nanopores in the film was successfully prepared as a result of self-assembly. The nanopores in the PS-b-PMMA film were able to be transferred to the Si substrate by CF4 etching through the SOG and aluminum oxide layers, although the etching was not uniform. The non-uniformity of the etching is also discussed.