Elionix ELS-7500EX: Field Size Analysis
Loading...
Penn collection
Protocols and Reports
Degree type
Discipline
Subject
Field Size
Field distortion
analysis
elionix
electron beam lithography
Nanoscience and Nanotechnology
Field distortion
analysis
elionix
electron beam lithography
Nanoscience and Nanotechnology
Funder
Grant number
License
Copyright date
Distributor
Related resources
Contributor
Abstract
This report documents the field distortion of the Elionix ELS-7500EX electron beam lithography system at the University of Pennsylvania Singh Center for Nanotechnology at the Quattrone Nanofabrication Facility. The system is equipped with a 20MHz fixed clock and fixed focus. The aim of the work is to understand optimal field sizes to use for critical dimensions 80nm and above. Field uniformity was analyzed as a function of critical dimension and objective lens aperture (OLA) a.k.a. final paerture. As features scale down below 300nm, they are more susceptible to the systematic effects of field distortion. Suggested field sizes depend on the feature size that is desired.
Advisor
Date Range for Data Collection (Start Date)
Date Range for Data Collection (End Date)
Digital Object Identifier
Series name and number
Publication date
2016-12-16