Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

June 2006


High resolution and cross-sectional transmission electron microscopy (HRTEM, XTEM) were used to characterize common defects in wurtzite GaN nanowires grown via the vapor-liquid-solid (VLS) mechanism. High resolution transmission electron microscopy showed that these nanowires contained numerous (001) stacking defects interspersed with cubic intergrowths. Using cross-sectional transmission electron microscopy, bicrystalline nanowires were discovered with two-fold rotational twin axes along their growth directions, and were concluded to grow along high index directions or vicinal to low index planes. A defect-mediated VLS growth model was used to account for the prevalence of these extended defects. Implications for nanowire growth kinetics and device behavior are discussed.


Postprint version. Published in Advanced Functional Materials, Volume 16, Issue 9, June 2006, pages 1197-1202.
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Date Posted: 05 December 2006

This document has been peer reviewed.