Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

June 2006

Comments

Postprint version. Published in Advanced Functional Materials, Volume 16, Issue 9, June 2006, pages 1197-1202.
Publisher URL: http://www3.interscience.wiley.com/cgi-bin/jhome/77003362

Abstract

High resolution and cross-sectional transmission electron microscopy (HRTEM, XTEM) were used to characterize common defects in wurtzite GaN nanowires grown via the vapor-liquid-solid (VLS) mechanism. High resolution transmission electron microscopy showed that these nanowires contained numerous (001) stacking defects interspersed with cubic intergrowths. Using cross-sectional transmission electron microscopy, bicrystalline nanowires were discovered with two-fold rotational twin axes along their growth directions, and were concluded to grow along high index directions or vicinal to low index planes. A defect-mediated VLS growth model was used to account for the prevalence of these extended defects. Implications for nanowire growth kinetics and device behavior are discussed.

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Date Posted: 05 December 2006

This document has been peer reviewed.