Date of this Version
An image sensor comprising an array of 128 by 50 super pixels, column parallel current conveyors and global difference double sampling (DDS) unit is presented. The super pixel consists of: a reset transistor, a readout transistor, four transfer transistors and four photodiodes. The photo pixel address switch is placed outside the pixel, effectively implementing 1.5 transistors per pixel using a sharing scheme of the readout and reset transistor. The column FPN of 0.43% from saturated level and SNR of 43.9 dB is measured. The total power consumption is 5 mW at 30 frame/s.
V. Gruev, Z. Yang, and Jan Van der Spiegel, "Low-Power Reduced Transistor Image Sensor", . July 2009.
Date Posted: 22 December 2010
This document has been peer reviewed.