Optimization of Plasma Enhanced Chemical Vapor Deposition (PECVD) of Amorphous Silicon (a-Si) Using Oxford Instruments System 100 with Taguchi L9 Based Design of Experiments (DOE)
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Quattrone Nanofabrication Facility
Quattrone Nanofabrication Facility
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Nanoscience and Nanotechnology
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2017-02-20
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The purpose of this document is to show the optimization of the PECVD process for amorphous silicon (a-Si) using the Taguchi L9 Design of Experiments (DOE).