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Optimization of Plasma Enhanced Chemical Vapor Deposition (PECVD) of Amorphous Silicon (a-Si) Using Oxford Instruments System 100 with Taguchi L9 Based Design of Experiments (DOE)
Raj Patel, University of PennsylvaniaFollow Meredith Metzler, Singh Center for NanotechnologyFollow
Technical Report
2-20-2017
The purpose of this document is to show the optimization of the PECVD process for amorphous silicon (a-Si) using the Taguchi L9 Design of Experiments (DOE).
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Date Posted: 20 February 2017
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The purpose of this document is to show the optimization of the PECVD process for amorphous silicon (a-Si) using the Taguchi L9 Design of Experiments (DOE).