
Protocols and Reports
Document Type
Working Paper
Date of this Version
12-2021
Abstract
In this report, the ALD process for deposition of SiO2 using BDEAS and O3 as precursors has been studied. The etch rates and uniformity of deposition at various temperatures are reported.
Keywords
SiO2 ALD, BDEAS, Bis(diethylamino)silane
Date Posted: 13 December 2021