Protocols and Reports

Document Type

Working Paper

Date of this Version



In this report, the ALD process for deposition of SiO2 using BDEAS and O3 as precursors has been studied. The etch rates and uniformity of deposition at various temperatures are reported.


SiO2 ALD, BDEAS, Bis(diethylamino)silane



Date Posted: 13 December 2021


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