Protocols and Reports

Document Type

Working Paper

Date of this Version

11-14-2019

Facility

Quattrone Nanofabrication Facility

Abstract

Aluminum contacts are widely used to form both ohmic and rectifying contacts. The process to form these contacts involves annealing, thus it is important to study the effect of annealing on the electrical properties of the contacts. Here, we present a way to measure the contact resistance of aluminum contacts formed on a p-type silicon substrate. It was found the contact resistivity decreased by an average of 18%. It was thus found that annealing at 400°C in a forming gas environment improves the electrical properties of aluminum contacts.

Keywords

Metallization, contact resistance, aluminum contacts, contact resistivity

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Date Posted:14 November 2019

This document has been peer reviewed.

 

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