Protocols and Reports

Document Type

Technical Report

Date of this Version

3-14-2019

Facility

Quattrone Nanofabrication Facility

Abstract

This report describes fabrication of 100 to 200 nm diameter silicon nanopillars with ~140:1 aspect ratio using Metal Assisted Chemical Etching (MacEtch) process giving a high etch rate of ~930 nm/min, and also discusses an area dependence of the etch uniformity and rate, using 0.5 and 1 µm diameter, and 2 mm x 2 mm Au films. It is found that the etching using the Au film with the area of 0.2 µm2 is uniform, but that with the area of more than 0.8 µm2 is not, suggesting that the diffusion length of the species in MacEtch reaction underneath the Au film is ~300 nm.

Creative Commons License

Creative Commons Attribution-Share Alike 4.0 License
This work is licensed under a Creative Commons Attribution-Share Alike 4.0 License.

Keywords

Nanopillar, Metal Assisted Chemical Etching, High Aspect Ratio

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Date Posted: 14 March 2019

This document has been peer reviewed.

 

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