Date of this Version
Quattrone Nanofabrication Facility
This progress report describes fabrication of silicon nitride membranes from Si wafers using cleanroom techniques, and of nanopore preparation via a self-assembled PS-b-PMMA film. A 36.9 µm thick membrane is successfully prepared by KOH wet etching. The membrane is a layered structure of 36.8 µm thick Si and 116 nm thick silicon nitride. It is also exhibited that in the 47 nm thick PS-b-PMMA film, the nanopore structure is observed in the vicinity of a dust particle, but most of the area indicates lamellar domain structure. The thickness of PS-b-PMMA film will be optimized to prepare a complete nanopore template in the future work.
Creative Commons License
This work is licensed under a Creative Commons Attribution-Share Alike 4.0 International License.
Nanopore, Self-Assembly, PS-b-PMMA, Silicon nitride, Membrane
Chemical Engineering Commons, Electrical and Computer Engineering Commons, Engineering Science and Materials Commons, Materials Science and Engineering Commons, Nanoscience and Nanotechnology Commons, Physical Sciences and Mathematics Commons
Date Posted: 05 March 2019
This document has been peer reviewed.