Protocols and Reports
Document Type
Technical Report
Date of this Version
10-6-2016
Facility
Quattrone Nanofabrication Facility
Abstract
This technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and highlights the difference in etch properties between small (~10 micron) and large (~500 micron) features.
Date Posted: 06 October 2016