Protocols and Reports
Document Type
Technical Report
Date of this Version
9-2-2016
Facility
Quattrone Nanofabrication Facility
Abstract
This report describes KOH etching of (100) Si wafer through a hard mask of silicon oxide, and reveals that the scattered etch rate is ascribed to the etch rates of the different crystal planes exposed during the etching.
Creative Commons License
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Keywords
KOH etching Silicon
Included in
Biological and Chemical Physics Commons, Engineering Physics Commons, Inorganic Chemistry Commons, Materials Chemistry Commons, Membrane Science Commons, Other Chemical Engineering Commons, Other Materials Science and Engineering Commons, Physical Chemistry Commons, Structural Materials Commons
Date Posted: 02 September 2016