Protocols and Reports
Cambridge Nanotech Savannah Atomic Layer Deposition (ALD) Film Characterization
Abstract
This report summarizes basic atomic layer deposition (ALD) growth characteristics for aluminum oxide (Al2O3), hafnium oxide (HfO2), and titanium dioxide (TiO2) films and presents a basic investigation of the presence of pinholes in these films.
This paper has been withdrawn.
Date Posted: 28 April 2016