Cambridge Nanotech Savannah Atomic Layer Deposition (ALD) Film Characterization

Meredith Metzler, Singh Center for Nanotechnology
Yichen Lu, University of Pennsylvania

Abstract

This report summarizes basic atomic layer deposition (ALD) growth characteristics for aluminum oxide (Al2O3), hafnium oxide (HfO2), and titanium dioxide (TiO2) films and presents a basic investigation of the presence of pinholes in these films.

 

Date Posted: 28 April 2016