Protocols and Reports

Search results

Now showing 1 - 10 of 74
  • Publication
    KOH etching of (100) Si wafer, No 2
    (2016-09-02) Bajwa, Inayat
    This report describes KOH etching of (100) Si wafer through a hard mask of silicon oxide, and reveals that the scattered etch rate is ascribed to the etch rates of the different crystal planes exposed during the etching.
  • Publication
    ZEP520A Contrast Curves
    (2016-12-16) Lopez, Gerald G.; Azadi, Mohsen
    This report documents the contrast curves for the ZEP520A electron beam lithography resist from ZEON Chemicals. Dilution by weight of ZEP520A vs spin speed from 1000 to 6000 rpm was generated in previous work. The aim is to provide an approximate clearing and base dose for the ZEP520A standard process at the Singh Center for Nanotechnology.
  • Publication
    Surface Treatment and Adhesion Study
    (2018-10-23) DeLessio, Maegan; Watson, Pat
    In photolithography, it is often the case that the resist has difficulty adhering to a wafer due to its hydrophobic nature. The purpose of this study was to determine the best method for avoiding such adhesion problems. This study describes that four different surface treatments, (1) No bake before resist coating, (2) Bake at 115ºC before priming, (3) SURPASS coating, and (4) HDMS priming, are examined for UV lithography of sub-ten micron-sized lines and pillar arrays, and that HDMS vapor priming is the most effective surface treatment in promoting adhesion.
  • Publication
    IPG Green Laser Micromachining SOP
    (2023-02-11) Johnston, Eric
    SOP for the 532nm green laser located in QNF.
  • Publication
    MicroChem S1800 Series Resist Application onto Si
    (2016-02-18) Wood, Steven; LOPEZ, GERALD G
    The Quattrone Nanofabrication Facility standard operating procedure for the application of MicroChem S1800 series resist onto an Si wafer is provided in this document.
  • Publication
    PMMA A2 Contrast Curves
    (2016-12-16) Lopez, Gerald G.; Azadi, Mohsen
    This report documents the contrast curves for the PMMA A2 electron beam lithography resist from MicroChem. Spin curves for PMMA A2 can be found in previous work. The aim is to provide an approximate clearing and base dose for the PMMA A2 standard process at the Singh Center for Nanotechnology.
  • Publication
    Stress Fracture Study Report
    (2015-08-30) Wen, Justin
  • Publication
    Effect of Developer Temperature on Photoresist Contrast in Grayscale Lithography
    (2021-05-12) Farnan, Dale; Watson, George Patrick
    SPR 220-3 photoresist was spin-coated onto a silicon wafer, exposed using a Heidelberg DWL66+ laserwriter at different laser powers, and developed at different temperatures. The effect of developer temperature on photoresist contrast was examined. Results show that increasing developer temperature decreased photoresist contrast and increased required dose.
  • Publication
    Influence of NaOH Concentration on Transfer Process of Graphene
    (2019-09-13) Saldana, Francisco; Wen, Chengyu; Watson, George Patrick
    The process of transferring a monolayer of graphene using two different concentrations of sodium hydroxide (NaOH) solution unto a silicon dioxide (SiO2) coated Si chip using electrochemistry was performed. The transfer process is crucial for the delamination of a continuous graphene monolayer film from copper foil. After examining and inspecting the integrity of the graphene monolayer, it was observed that the lower concentration to NaOH led to slower rate of hydrogen bubble generation; this condition was found to be less destructive and yielded a graphene film with fewer visible tears.
  • Publication
    PMMA A2 and A4 Spin Curves
    (2016-12-16) Lopez, Gerald G; Azadi, Mohsen
    This report documents the spin curves for the PMMA A2 and A4 electron beam lithography resists from MicroChem. The aim is to provide a spin curve reference for the A2 and A4 dilutions at the Singh Center for Nanotechnolgy Quattrone Nanofabrication Facility.