Quattrone Nanofabrication Facility
The Quattrone Nanofabrication Facility (QNF), is an open access user facility that provides equipment resources and staff assistance for building devices and structures at the micro- and nanoscale. In addition to supporting academic research, we serve as a regional resource in welcoming all projects from other universities, industry and national laboratories.
Submissions from 2017
Troubleshooting on the sample preparation for SU-8 to SU-8 wafer level bonding, Samagata Sen, Saurav Bose, and Shubham Sethi
Submissions from 2016
Spin Curves for MicroChem S1800 (1805, 1813, 1818) Series Positive Resist, Mohsen Azadi and Gerald G. Lopez
Characterization of Silicon Deep Reactive Ion Etching Using the SPTS Rapier, Mohsen Azadi, Meredith Metzler, and Gerald G. Lopez
Characterization of Silicon Dioxide (SiO2) and Microchem S1800 Resist Etching Using Oxford 80 Plus RIE, Mohsen Azadi, Meredith Metzler, and Gerald G. Lopez
KOH etching of (100) Si wafer, No 1, Inayat Bajwa
KOH etching of (100) Si wafer, No 2, Inayat Bajwa
Metal Assisted Chemical Etching, Inayat Bajwa
SUSS MicroTec MA6 Gen3 - S1805 Contrast Curve Data, Jonathan Bryan and GERALD G. LOPEZ
SUSS MicroTec MA6 Gen3 - S1813 Contrast Curve Data, Jonathan Bryan, Steven Wood, and Gerald G. Lopez
Self-Aligned Double Pattern, No1, Yinong Cao
High Contrast 50kV E-Beam Lithography for HSQ atop Diamond using ESPACER for Spin-On Charge Dissipation, Richard R. Grote, Lee C. Bassett, and Gerald G. Lopez
Presentation for Lab-on-a-Chip Seminar at QNF, Eric D. Johnston
Torrey Pines Scientific Hotplate Calibration, GERALD G. LOPEZ
ZEP520A Spin Curves and Dilution Characterization, Gerald G. Lopez Ph.D.
Reactive Ion Etch (RIE) of Silicon Dioxide (SiO2) with Tetrafluoromethane (CF4), Meredith Metzler
Reactive Ion Etch (RIE) of Silicon Dioxide (SiO2) with Trifluoromethane and Oxygen (CHF3/O2), Meredith Metzler
Reactive Ion Etch (RIE) of Silicon Nitride (SiNx) with Tetrafluoromethane (CF4), Meredith Metzler
Reactive Ion Etch (RIE) of Silicon Nitride (SiNx) with Trifluoromethane and Oxygen (CHF3/O2), Meredith Metzler
Atomic Layer Deposition (ALD) film characterization, Meredith Metzler and Yichen Lu
Spin Coating Thick Resist, Joseph Song and Danielle Soberman
ABM Mask Aligner Video Tutorial, Joseph W. Song
Degassing PDMS, Joseph W. Song and Danielle Soberman
Developing SU8 Resist, Joseph W. Song and Danielle Soberman
Heidelberg DWL66+ S1805 Contrast Curves, Steven Wood and Gerald G. Lopez
Heidelberg DWL66+ S1813 Contrast Curves, Steven Wood and GERALD G. LOPEZ
Heidelberg DWL66+ S1818 Contrast Curves, Steven Wood and GERALD G. LOPEZ
MicroChem S1800 Series Resist Application onto Si, Steven Wood and GERALD G. LOPEZ
SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs. Dose-to-Clear and Contrast Curve Data, Steven Wood and Gerald G. Lopez
Reactive Ion Etch (RIE) of Silicon and ZEP520A Resist Mask with Tetrafluoromethane (CF4) Using Oxford 80 Plus, Steven Wood, Gerald G. Lopez, and Meredith Metzler
Directed Self-Assembly of Block Copolymer, No1, Hiromichi Yamamoto
Submissions from 2015
Performance Check 1 on MA6 Mask Aligner, Jonathan Bryan
PDMS-Glass Bonding Protocol - Technics, Ravit Dung and Justin Wen
1. Dry Etching of SiO2, SiNx, and Si using 80plus Reactive Ion Etcher, Prashanth Gopalan
PDMS-PDMS Bonding Protocol - Technics, Steven Henry
KMPR Delamination Resistance Study Report, Steven Henry and Eric Johnston
SU-8 Delamination Resistance Study Report, Steven Henry, Eric Johnston, and Justin Wen
Photomask Defects Report, Steven Henry and Justin Wen
Performance Check 1 on Elionix E-beam writer, Jisoo Kang
Deep Silicon Etching using TRION, Zisong Nie
Deposition Rate and Surface Roughness of Ti films prepared by Explorer14 Magnetron Sputterer, Zisong Nie
Film Stress of Ti film prepared by PVD75 e-beam evaporator, Zisong Nie
Growth rates and Pinholes of ALD SiO2, Al2O3, TiO2, and HfO2 films, Zisong Nie
Surface Roughness and Morphology of Au film prepared by PVD75 e-beam evaporator, Zisong Nie
Surface Roughness of ALD films, Zisong Nie
Temperature dependence of ALD SiO2 growth, Zisong Nie
Thickness and Permeability (against XeF2) of Parylene C film using Parylene Coater, Zisong Nie
Al (confocal) deposition rate 1 using Explorer14 magnetron sputterer, Swapil Paliwal
Deposition rate of Ti film prepared by Explorer14 magnetron Sputterer, Swapil Paliwal
Thicknesses and Pinholes of SiO2, SiNx, and a-Si Films prepared by PECVD, No 1, Swapil Paliwal
Film stress of Ti films prepared by Explorer14 Magnetron Sputterer, Swapil Paliwal and Zisong Nie
Preparation of High Stress Silicon Nitride film using PECVD, Chia-Hsing Pi
Atomic Layer Deposition-1, growth rate and uniformity of Al2O3, Dhruv Turakhia
Deposition Rates 2 on PVD75 DC/RF Magnetron Sputterer, Dhruv Turakhia
Deposition Rates 3 on PVD75 DC/RF Magnetron Sputterer, Dhruv Turakhia
Deposition Rates on PVD75 Magnetron Sputterer, Dhruv Turakhia
Thicknesses and Pinholes of SiO2, SiNx, and a-Si Films prepared by PECVD, No 2, Dhruv Turakhia
Thickness Measurement on Ti, Au, Pd, and Cr using PVD75 E-beam Evaporator, Dhruv Turakhia
2. Dry Etching of SiO2, SiNx, and Si using 80plus Reactive Ion Etcher, Meet Vora
Channel Shape Study Report, Justin Wen
PDMS-Glass Bonding Protocol - Anatech, Justin Wen
PDMS-PDMS Bonding Protocol - Anatech, Justin Wen
Priming Methods for PDMS Devices Study Report, Justin Wen
Stress Fracture Study Report, Justin Wen
T-Topping Study Report, Justin Wen
Standard Operating Procedures of Tools in Quattrone Nanofabrication Facility, Hiromichi Yamamoto
Statistical Process Control of 80plus Reactive Ion Etcher, Hiromichi Yamamoto
Statistical Process Control of Alignment Module of NX2600, Hiromichi Yamamoto
Statistical Process Control of PECVD, Hiromichi Yamamoto
Performance Check on ABM3000HR Mask Aligner, Lin Zhao and Prashanth Gopalan