Quattrone Nanofabrication Facility
The Quattrone Nanofabrication Facility (QNF), is an open access user facility that provides equipment resources and staff assistance for building devices and structures at the micro- and nanoscale. In addition to supporting academic research, we serve as a regional resource in welcoming all projects from other universities, industry and national laboratories.
Submissions from 2019
Fabrication of High Aspect Ratio Nanopillars using Metal Assisted Chemical Etching, Rimjhim Chaudhary and Hiromichi Yamamoto
Fabrication of Organic Thin Film Transistors using Inkjet Printing of PEDOT:PSS, Sourajit Das, Akshaya Venkatakrishnan, Hiromichi Yamamoto, and George Patrick Watson
Characterization and Optimization of Parylene-C deposition process using SCS Parylene coater, Hannah Hastings, Eric D. Johnston, and Gyuseok Kim
Microfluidics for Medical Research, Eric D. Johnston
Progress Report I: Fabrication of Nanopores in Silicon Nitride Membranes using Self-Assembly of PS-b-PMMA, Unnati Joshi, Vishal Venkatesh, and Hiromichi Yamamoto
Post-process Protocol of Photomask for UV lithography: Wet etch and Strip, Ifeoluwa Popoola and David Jones
Influence of NaOH Concentration on Transfer Process of Graphene, Francisco Saldana, Chengyu Wen, and George Patrick Watson
Influence of flow rate, nozzle speed, pitch and the number of passes on the thickness of S1805 photoresist in SUSS MicroTec AS8 spray coater, Rohan Sanghvi and Gyuseok Kim
Optimization of Ultrasonic Aluminum Wire Bonding on Chromium and Gold Surfaces Using K&S Wedge Wire Bonder, Ryan Tetro and Gyuseok Kim
Progress Report II: Fabrication of Nanopores in Silicon Nitride Membrane using Self-Assembly of PS-b-PMMA: Nanopore Pattern Transfer to the Si substrate, Kodai Watanabe, Unnati Joshi, and Hiromichi Yamamoto
Correction of pattern size deviations in the fabrication of photomasks made with a laser direct-writer, Ningzhi Xie and George Patrick Watson
Dynamics of Directed Self-Assembly of PS-b-PMMA during Solvent Annealing, Hiromichi Yamamoto
Reactive Ion Etching Selectivity of Si/SiO2: Comparing of two fluorocarbon gases CHF3 and CF4, Meiyue Zhang and Pat Watson
Submissions from 2018
CSAR 62 Spin Curve, Mohsen Azadi, Georgia Griggs, Glen de Villafranca, and Gerald Lopez
Comparison between Silicon Nanopillars Prepared by Bosch Process and Metal Assisted Chemical Etching, Rimjhim Chaudhary
Surface Roughness Dependence of Inkjet Printing of Ag Nanoparticles, Ming Yuan Chuang
Surface Treatment and Adhesion Study, Maegan DeLessio and Pat Watson
Alignment Error Examination of Elionix E-Beam Writer ELS-7500EX, Yangshanshan Li
DisCharge: Spin-On Anti-Charging Agent for Electron Beam Lithography, Gerald G. Lopez Ph.D. and Glen de Villafranca
KMPR Master Fabrication Protocol, Justin Wen
Submissions from 2017
Inkjet Printing of Ag Nanoparticles using Dimatix Inkjet Printer, No 1, Amal Abbas and Inayat Bajwa
CSAR 62 Contrast Curves, Mohsen Azadi, Georgia Griggs, Glen de Villafranca, and Gerald Lopez
MicroChem S1818 Contrast Curve Optimization, Mohsen Azadi and Gerald Lopez
Inkjet Printing of Ag Nanoparticles using Dimatix Inkjet Printer, No 2, Ming Yuan Chuang
Mask Flaw Propagation Using 360nm Long Pass Filter, Ram Surya Gona and Eric D. Johnston
SU-8 Post Development Bake (Hard Bake) Study, Ram Surya Gona and Eric D. Johnston
Video Tutorial for ABM Mask Aligner, Including Alignment, Ram Surya Gona and Abhishek Kalpattu
Effect of Post-Development Bake on Adhesion of SU-8, Eric D. Johnston and Ram Surya Gona
PDMS Shrinkage, Abhishek Kalpattu
Characterization of Sputtering Platinum Using the Denton Explorer-14 System, Roman Mays
Characterization of Sputtering Copper Using the Denton Explorer-14 System, Roman Mays and Meredith Metzler
Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Dioxide (SiO2) Using Oxford Instruments System 100 PECVD, Meredith Metzler and Raj Patel
Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Nitride (SiNx) Using Oxford Instruments System 100 PECVD, Meredith Metzler and Raj Patel
Optimization of Plasma Enhanced Chemical Vapor Deposition (PECVD) of Amorphous Silicon (a-Si) Using Oxford Instruments System 100 with Taguchi L9 Based Design of Experiments (DOE), Raj Patel and Meredith Metzler
Troubleshooting on the sample preparation for SU-8 to SU-8 wafer level bonding, Samagata Sen, Saurav Bose, and Shubham Sethi
Submissions from 2016
Spin Curves for MicroChem S1800 (1805, 1813, 1818) Series Positive Resist, Mohsen Azadi and Gerald G. Lopez
Characterization of Silicon Deep Reactive Ion Etching Using the SPTS Rapier, Mohsen Azadi, Meredith Metzler, and Gerald G. Lopez
Characterization of Silicon Dioxide (SiO2) and Microchem S1800 Resist Etching Using Oxford 80 Plus RIE, Mohsen Azadi, Meredith Metzler, and Gerald G. Lopez
KOH etching of (100) Si wafer, No 1, Inayat Bajwa
KOH etching of (100) Si wafer, No 2, Inayat Bajwa
Metal Assisted Chemical Etching, Inayat Bajwa
SUSS MicroTec MA6 Gen3 - S1805 Contrast Curve Data, Jonathan Bryan and GERALD G. LOPEZ
SUSS MicroTec MA6 Gen3 - S1813 Contrast Curve Data, Jonathan Bryan, Steven Wood, and Gerald G. Lopez
Self-Aligned Double Pattern, No1, Yinong Cao
High Contrast 50kV E-Beam Lithography for HSQ atop Diamond using ESPACER for Spin-On Charge Dissipation, Richard R. Grote, Lee C. Bassett, and Gerald G. Lopez
Presentation for Lab-on-a-Chip Seminar at QNF, Eric D. Johnston
Torrey Pines Scientific Hotplate Calibration, GERALD G. LOPEZ
ZEP520A Spin Curves and Dilution Characterization, Gerald G. Lopez Ph.D.
Reactive Ion Etch (RIE) of Silicon Dioxide (SiO2) with Tetrafluoromethane (CF4), Meredith Metzler
Reactive Ion Etch (RIE) of Silicon Dioxide (SiO2) with Trifluoromethane and Oxygen (CHF3/O2), Meredith Metzler
Reactive Ion Etch (RIE) of Silicon Nitride (SiNx) with Tetrafluoromethane (CF4), Meredith Metzler
Reactive Ion Etch (RIE) of Silicon Nitride (SiNx) with Trifluoromethane and Oxygen (CHF3/O2), Meredith Metzler
Atomic Layer Deposition (ALD) film characterization, Meredith Metzler and Yichen Lu
Spin Coating Thick Resist, Joseph Song and Danielle Soberman
ABM Mask Aligner Video Tutorial, Joseph W. Song
Degassing PDMS, Joseph W. Song and Danielle Soberman
Developing SU8 Resist, Joseph W. Song and Danielle Soberman
Heidelberg DWL66+ S1805 Contrast Curves, Steven Wood and Gerald G. Lopez
Heidelberg DWL66+ S1813 Contrast Curves, Steven Wood and GERALD G. LOPEZ
Heidelberg DWL66+ S1818 Contrast Curves, Steven Wood and GERALD G. LOPEZ
MicroChem S1800 Series Resist Application onto Si, Steven Wood and GERALD G. LOPEZ
SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs. Dose-to-Clear and Contrast Curve Data, Steven Wood and Gerald G. Lopez
Reactive Ion Etch (RIE) of Silicon and ZEP520A Resist Mask with Tetrafluoromethane (CF4) Using Oxford 80 Plus, Steven Wood, Gerald G. Lopez, and Meredith Metzler
Directed Self-Assembly of Block Copolymer, No1, Hiromichi Yamamoto
Submissions from 2015
Performance Check 1 on MA6 Mask Aligner, Jonathan Bryan
PDMS-Glass Bonding Protocol - Technics, Ravit Dung and Justin Wen
1. Dry Etching of SiO2, SiNx, and Si using 80plus Reactive Ion Etcher, Prashanth Gopalan
PDMS-PDMS Bonding Protocol - Technics, Steven Henry
KMPR Delamination Resistance Study Report, Steven Henry and Eric Johnston
SU-8 Delamination Resistance Study Report, Steven Henry, Eric Johnston, and Justin Wen
Photomask Defects Report, Steven Henry and Justin Wen
Performance Check 1 on Elionix E-beam writer, Jisoo Kang
Deep Silicon Etching using TRION, Zisong Nie
Deposition Rate and Surface Roughness of Ti films prepared by Explorer14 Magnetron Sputterer, Zisong Nie
Film Stress of Ti film prepared by PVD75 e-beam evaporator, Zisong Nie
Growth rates and Pinholes of ALD SiO2, Al2O3, TiO2, and HfO2 films, Zisong Nie
Surface Roughness and Morphology of Au film prepared by PVD75 e-beam evaporator, Zisong Nie
Surface Roughness of ALD films, Zisong Nie
Temperature dependence of ALD SiO2 growth, Zisong Nie
Thickness and Permeability (against XeF2) of Parylene C film using Parylene Coater, Zisong Nie
Al (confocal) deposition rate 1 using Explorer14 magnetron sputterer, Swapil Paliwal
Deposition rate of Ti film prepared by Explorer14 magnetron Sputterer, Swapil Paliwal
Thicknesses and Pinholes of SiO2, SiNx, and a-Si Films prepared by PECVD, No 1, Swapil Paliwal
Film stress of Ti films prepared by Explorer14 Magnetron Sputterer, Swapil Paliwal and Zisong Nie
Preparation of High Stress Silicon Nitride film using PECVD, Chia-Hsing Pi
Atomic Layer Deposition-1, growth rate and uniformity of Al2O3, Dhruv Turakhia
Deposition Rates 2 on PVD75 DC/RF Magnetron Sputterer, Dhruv Turakhia
Deposition Rates 3 on PVD75 DC/RF Magnetron Sputterer, Dhruv Turakhia
Deposition Rates on PVD75 Magnetron Sputterer, Dhruv Turakhia
Thicknesses and Pinholes of SiO2, SiNx, and a-Si Films prepared by PECVD, No 2, Dhruv Turakhia
Thickness Measurement on Ti, Au, Pd, and Cr using PVD75 E-beam Evaporator, Dhruv Turakhia
2. Dry Etching of SiO2, SiNx, and Si using 80plus Reactive Ion Etcher, Meet Vora
Channel Shape Study Report, Justin Wen
Layout Editor - User Interface, Justin Wen
PDMS-Glass Bonding Protocol - Anatech, Justin Wen
PDMS-PDMS Bonding Protocol - Anatech, Justin Wen
Priming Methods for PDMS Devices Study Report, Justin Wen