Department of Physics Papers

Document Type

Journal Article

Date of this Version

7-20-2006

Abstract

We report on a simple method to fabricate, under ambient conditions and within seconds, Schottky nanodiodes using electrospun polyaniline nanofibers and an inorganic n-doped semiconductor. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying nanojunction to the surrounding environment, making them attractive candidates in the potential fabrication of low power, supersensitive, and rapid response sensors as well. The diode parameters were calculated assuming the standard thermionic emission model of a Schottky junction, and the use of this junction as a gas sensor was examined.

Comments

Suggested Citation:
Pinto, N.J., González, R., Johnson, A.T. and MacDiarmid, A.G. (2006). Electrospun hybrid organic/inorganic semiconductor Schottky nanodiode. Applied Physics Letters 89, 033505.

© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.2227758

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Date Posted: 14 July 2011

This document has been peer reviewed.