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Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.
Yang, X., Chen, A. B., Choi, B., & Chen, I. (2013). Demonstration and Modeling of Multi-Bit Resistance Random Access Memory. Retrieved from https://repository.upenn.edu/mse_papers/225
Date Posted: 27 February 2013
This document has been peer reviewed.