Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

1-29-2013

Abstract

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.

Comments

Yang, X., Chen, A. B. K., Choi, B. J., Chen, I. (2013). Demonstration and modeling of multi-bit resistance random access memory. Applied Physics Letters, 102(4), 043502. doi: 10.1063/1.4790158

Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Date Posted: 27 February 2013

This document has been peer reviewed.