Departmental Papers (MSE)

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Journal Article

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Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.


Yang, X., Chen, A. B. K., Choi, B. J., Chen, I. (2013). Demonstration and modeling of multi-bit resistance random access memory. Applied Physics Letters, 102(4), 043502. doi: 10.1063/1.4790158

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Date Posted: 27 February 2013

This document has been peer reviewed.