Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

8-16-2011

Abstract

The ballistic transport properties of Cu nanowires under different electric and stress fields are investigated for future application in microelectronics using first-principles density-function theory. Relative to the case with the electric field only, the stability and quantum conduction of both nonhelical and helical atomic strands are enhanced by applying a stress field F. Under V = 1 V/Å, the most excellent quantum conductivity is exhibited at F = 1.5 nN for the nonhelical atomic strands while at F = 2 nN for the helical ones, and the latter is more stable with collapse-resistant F high as 3 nN compared to the former as 2 nN.

Comments

He, C., Qi, L., Zhang, W.X., Pan, H. (2011). Effect of electric and stress field on structures and quantum conduction of Cu nanowires. Applied Physics Letters. 99, 073105.


© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.10631/1.3626841.

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Date Posted: 26 March 2012

This document has been peer reviewed.