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The ballistic transport properties of Cu nanowires under different electric and stress fields are investigated for future application in microelectronics using first-principles density-function theory. Relative to the case with the electric field only, the stability and quantum conduction of both nonhelical and helical atomic strands are enhanced by applying a stress field F. Under V = 1 V/Å, the most excellent quantum conductivity is exhibited at F = 1.5 nN for the nonhelical atomic strands while at F = 2 nN for the helical ones, and the latter is more stable with collapse-resistant F high as 3 nN compared to the former as 2 nN.
He, C., Qi, L., Zhang, W. X., & Pan, H. (2011). Effect of Electric and Stress Field on Structures and Quantum Conduction of Cu Nanowires. Retrieved from https://repository.upenn.edu/mse_papers/213
Date Posted: 26 March 2012
This document has been peer reviewed.