Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

6-4-2010

Abstract

Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. However, drift in stressed nanowires embedded under dielectric films is comparable to thin-films. Our results shows that drift in PCM is due to stress relaxation and will help in understanding and controlling drift in PCM devices.

Comments

Suggested Citation:
Mitra, M., Y. Jung, D.S. Gianola, R. Agarwal. (2010). "Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices." Applied Physics Letters. Vol. 96, 222111.

© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.3447941.

Share

COinS
 

Date Posted: 04 November 2010

This document has been peer reviewed.