Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

5-19-2009

Abstract

Chalcopyritelike quaternary chalcogenides, Cu(2)ZnSnQ(4) (Q=S,Se), were investigated as an alternative class of wide-band-gap p-type thermoelectric materials. Their distorted diamondlike structure and quaternary compositions are beneficial to lowering lattice thermal conductivities. Meanwhile, partial substitution of Cu for Zn creates more charge carriers and conducting pathways via the CuQ(4) network, enhancing electrical conductivity. The power factor and the figure of merit (ZT) increase with the temperature, making these materials suitable for high temperature applications. For Cu(2.1)Zn(0.9)SnQ(4), ZT reaches about 0.4 at 700 K, rising to 0.9 at 860 K.

Comments

Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. Reprinted from:

A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu[sub 2]ZnSnQ[sub 4] (Q = S,Se) Min-Ling Liu, Fu-Qiang Huang, Li-Dong Chen, and I-Wei Chen, Appl. Phys. Lett. 94, 202103 (2009), DOI:10.1063/1.3130718
Publisher URL: http://link.aip.org/link/?APPLAB/94/202103/1

Keywords

ELECTRONIC-STRUCTURE, THIN-FILMS, SN, SEMICONDUCTOR, TRANSPORT, CRYSTAL, SYSTEM

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Date Posted: 15 July 2009

This document has been peer reviewed.