Date of this Version
Nanometer sized defects in thin HfOx films are detected by atomic force microscopy facilitated leakage current measurements. Differences in the electrical properties of individual defects were distinguished. The effects of two mechanisms that localize the tip-sample interaction and increase spatial resolution were calculated. The expected increase in tip-sample current due to stress induced phase transformations and band gap narrowing has been calculated, and a behavior diagram is presented that shows the pressure necessary to generate a detectable current increase as a function of tip radius.
SCANNING CAPACITANCE MICROSCOPY, SPREADING RESISTANCE MICROSCOPY, SPATIAL-RESOLUTION, SILICON, SI, atomic force microscopy, dielectric thin films, flaw detection, leakage currents
Nikiforov, M. N., Brukman, M. J., & Bonnell, D. A. (2008). High-resolution characterization of defects in oxide thin films. Retrieved from https://repository.upenn.edu/mse_papers/165
Date Posted: 28 May 2009
This document has been peer reviewed.