Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

11-3-2008

Abstract

Nanometer sized defects in thin HfOx films are detected by atomic force microscopy facilitated leakage current measurements. Differences in the electrical properties of individual defects were distinguished. The effects of two mechanisms that localize the tip-sample interaction and increase spatial resolution were calculated. The expected increase in tip-sample current due to stress induced phase transformations and band gap narrowing has been calculated, and a behavior diagram is presented that shows the pressure necessary to generate a detectable current increase as a function of tip radius.

Comments

Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Reprinted from:
High-resolution characterization of defects in oxide thin films Maxim N. Nikiforov, Matthew J. Brukman, and Dawn A. Bonnell, Appl. Phys. Lett. 93, 182101 (2008), DOI:10.1063/1.2982082
Publisher URL: http://link.aip.org/link/?APPLAB/93/182101/1

Keywords

SCANNING CAPACITANCE MICROSCOPY, SPREADING RESISTANCE MICROSCOPY, SPATIAL-RESOLUTION, SILICON, SI, atomic force microscopy, dielectric thin films, flaw detection, leakage currents

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Date Posted: 28 May 2009

This document has been peer reviewed.